PART |
Description |
Maker |
T10A120T T10A130B T10A200T T10A240T T10A270B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 216V,max. Ir = 50uA @ Vr = 240V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 243V,max. Ir = 50uA @ Vr = 270V,max, Bulk (500pcs).
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Littelfuse
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376 |
DIODE SCHOTTKY DUAL-DUAL SERIES 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL
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Intel Corp.
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IS82C37A CS82C37A CS82C37A-12 CS82C37A-5 5962-9054 |
CMOS High Performance Programmable DMA Controller RECTIFIER BRIDGE 10A 100V BR-6 高性能的CMOS可编程DMA控制 CMOS High Performance Programmable DMA Controller 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, CDIP40 CMOS High Performance Programmable DMA Controller 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, UUC40 DIODE SCHOTTKY DUAL-DUAL COMMON-CATHODE 25V 200mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, PDIP40 CMOS High Performance Programmable DMA Controller 高性能的CMOS可编程DMA控制 DIODE SCHOTTKY DUAL ISOLATED 25V 200mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL DIODE SCHOTTKY DUAL SERIES 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL Triple 3-input positive-NAND gates 14-PDIP 0 to 70 RECTIFIER BRIDGE 10A 800V BR-6 RECTIFIER BRIDGE 10A 1000V BR-6 From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
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NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
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M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V surface mount silicon Zener diodes Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位(处理器x16插槽,引导块V电源快闪记忆
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意法半导 STMicroelectronics N.V.
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MAX406 MAX406A MAX406B MAX418 MAX407 MAX419 MAX409 |
1.2μA Max, Single/Dual/Quad, Single-Supply Op Amps 1.2レA Max, Single/Dual/Quad, Single-Supply Op Amps 1.2A Max, Single/Dual/Quad, Single-Supply Op Amps 1.2ヌA MAX, SINGLE/DUAL/QUAD, SINGLE-SUPPLY OP AMPS 1.2A Max / Single/Dual/Quad / Single-Supply Op Amps 1.2microA max, dual, single-supply op amp.
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Maxim Integrated Produc... MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
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OP-04N OP-14G OP-14N OP-14Z/883 |
DUAL OP-AMP, 750 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, UUC14 DIE-14 DUAL OP-AMP, 2000 uV OFFSET-MAX, UUC14 DIE-14 DUAL OP-AMP, 3000 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, CDIP8 HERMETIC SEALED, CERAMIC, DIP-8
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Analog Devices, Inc.
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OP-249AJ/883 OP-249ARC/883 OP-249AZ/883 |
DUAL OP-AMP, 500 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, MBCY8 METAL CAN, TO-99, 8 PIN DUAL OP-AMP, 500 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, CQCC20 HERMETIC SEALED, CERAMIC, LCC-20 DUAL OP-AMP, 500 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, CDIP8 CERDIP-8
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Analog Devices, Inc.
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OP249ARC/883 OP249GS-REEL OP249GP |
THERMISTOR NTC 5K OHM 5% RAD DUAL OP-AMP, 3600 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, PDSO8 Dual, Precision JFET High Speed Operational Amplifier DUAL OP-AMP, 3600 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, PDIP8
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Analog Devices, Inc.
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LM2904 SE532 NE532 LM358 LM2904D LM258D LM358N LM2 |
DUAL OP-AMP, 7000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 3.90 MM, PLASTIC, SO-8 DUAL OP-AMP, 9000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 3.90 MM, PLASTIC, SO-8 Low power dual operational amplifiers
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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MAX409BESAT |
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps OP-AMP, 3000 uV OFFSET-MAX, 0.15 MHz BAND WIDTH, PDSO8
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Maxim Integrated Products, Inc.
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